BF912N60L - N-Channel MOSFET
These N-Channel enhancement mode power field effect transistors are produced using DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Th.
BF912N60L Features
* z VDS =600 V z ID =12A z RDS(ON) =0.5 Ω TYP(VGS=10V,ID=6.0A)
z Low CRSS (typical 17pF) z Fast switching
Absolute Maximum Ratings
Symbol Parameter
VDS Drain-Source Voltage
ID Drain Current(continuous)at Tc=25°C
IDM Drain Current (pulsed)
(Note1)
VGS Gate-Source Voltage
EAS Single PulseAvalanch