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BF912N60L, BF912N60 Datasheet - BYD

BF912N60L N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Th.

BF912N60L Features

* z VDS =600 V z ID =12A z RDS(ON) =0.5 Ω TYP(VGS=10V,ID=6.0A) z Low CRSS (typical 17pF) z Fast switching Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage ID Drain Current(continuous)at Tc=25°C IDM Drain Current (pulsed) (Note1) VGS Gate-Source Voltage EAS Single PulseAvalanch

BF912N60-BYD.pdf

This datasheet PDF includes multiple part numbers: BF912N60L, BF912N60. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

BF912N60L, BF912N60

Manufacturer:

BYD

File Size:

255.92 KB

Description:

N-channel mosfet.

Note:

This datasheet PDF includes multiple part numbers: BF912N60L, BF912N60.
Please refer to the document for exact specifications by model.

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BF912N60L BF912N60 N-Channel MOSFET BYD

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