Description
This Power MOSFET device has specifically been designed to minimize input capacitance and gate charge.
Features
- z VDS =40V z ID =100A z Typical RDS(ON) =2.5m Ω (VGS=10V,ID=50A) z Fast switching z 100% avalanche tested z Improved dv/dt capability
Absolute Maximum Ratings
Symbol Parameter
VDS Drain-Source Voltage
Drain Current(continuous)at Tc=25℃ ID Drain Current(continuous)at Tc=100℃
IDM
Drain Current (package limited) （Note1）
VGS Gate-Source Voltage
EAS Single Pulse Avalanche Energy
IAR Avalanche Current
EAR Repetitive Avalanche Energy
PD
Power Dissipation (TC = 25°C) Power Dissipation (TC =1.
BF91404-BYD.pdf
