BF910N60 Datasheet, Mosfet, BYD

BF910N60 Features

• Mosfet z VDS =600 V z ID =10A z RDS(ON) =0.65 Ω TYP(VGS=10V,ID=5.0A) z Low CRSS (typical 16pF) z Fast switching Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage ID Drain C

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BF910N60

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BYD

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📄 Datasheet

Description:

N-channel mosfet. These N-Channel enhancement mode power field effect transistors are produced using DMOS technology. This advanced technology has been

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BF910N60

BYD

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