BCF020T Datasheet - BeRex

BCF020T - HIGH EFFICIENCY HETEROJUNCTION POWER FET

BCF020T HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 200 µm) The BeRex BCF020T is a GaAs Power MESFET whose nominal 0.3 micron gate length and 200 micron gate width make the product ideally suited to applications requiring high OIP3 linearity and low phase noise while providing high-gain and medium power from DC to 26.5 GHz. This product is well suited for either wideband or narrow-band applications. The BCF020T is produced using state of the art metallization and each wafer is screene.

BCF020T Features

* 20 dBm Typical Output Power

* 13.5 dB Typical Power Gain @ 12 GHz

* Low Phase Noise

* 0.3 X 200 Micron Recessed Gate Applications

* Commercial

* Military / Hi-Rel

* Test & Measurement DC CHARACTERISTIC (Ta = 25° C) PARAMETER/TEST CONDITIONS

BCF020T-BeRex.pdf