* 20 dBm Typical Output Power
* 13.5 dB Typical Power Gain @ 12 GHz
* Low Phase Noise
* 0.3 X 200 Micron Recessed Gate Applications
* Commercial
* Military / Hi-Rel
* Test & Measurement DC CHARACTERISTIC (Ta = 25° C) PARAMETER/TEST CONDITIONS
BCF020T
BeRex
377.39 KB
High efficiency heterojunction power fet.
BCF020T
HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 200 µm)
The BeRex BCF020T is a GaAs Power MESFET whose nominal 0.3 micron gate length a.
📁 Related Datasheet
BCF030T HIGH EFFICIENCY HETEROJUNCTION POWER FET (BeRex)
BCF040T HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (BeRex)
BCF060T HIGH EFFICIENCY HETEROJUNCTION POWER FET (BeRex)
BCF080T HIGH EFFICIENCY HETEROJUNCTION POWER FET (BeRex)
BCF120T HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (BeRex)
BCF240T HIGH EFFICIENCY HETEROJUNCTION POWER FET (BeRex)
BCF29 PNP general purpose transistors (NXP)
BCF29 Surface mount Si-Epitaxial PlanarTransistors (Diotec Semiconductor)
BCF29 (BCF29 / BCF30) PNP General Purpose Transistors (Guangdong Kexin)
BCF30 PNP general purpose transistors (NXP)
