* 23.0 dBm Typical Output Power
* 13 dB Typical Power Gain @ 12 GHz
* Low Phase Noise
* 0.3 X 400 Micron Recessed Gate Applications
* Commercial
* Military / Hi-Rel
* Test & Measurement DC CHARACTERISTIC (Ta = 25° C) PARAMETER/TEST CONDITION
BCF040T
BeRex
324.49 KB
High efficiency heterojunction power fet chip.
BCF040T
HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 400 µm)
The BeRex BCF040T is a GaAs Power MESFET whose nominal 0.3 micron gate length a.
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