BCF240T Datasheet - BeRex

BCF240T HIGH EFFICIENCY HETEROJUNCTION POWER FET

BCF240T HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 2400 µm) The BeRex BCF240T is a GaAs Power MESFET whose nominal 0.3 micron gate length and 2400 micron gate width make the product ideally suited to applications requiring high OIP3 linearity and low phase noise while providing high-gain and medium power from DC to 26.5 GHz. This product is well suited for either wideband or narrow-band applications. The BCF240T is produced using state of the art metallization and devices from each w.

BCF240T Features

* 30.4 dBm Typical Output Power

* 9.8 dB Typical Power Gain @ 12 GHz

* Low Phase Noise

* 0.3 X 2400 Micron Recessed Gate Applications

* Commercial

* Military / Hi-Rel

* Test & Measurement DC CHARACTERISTIC (Ta = 25° C) PARAMETER/TEST CONDITION

BCF240T-BeRex.pdf

BCF240T Datasheet Preview — Preview of BCF240T PDF

Datasheet Details

Part number:

BCF240T

Manufacturer:

BeRex

File Size:

410.63 KB

Description:

High efficiency heterojunction power fet.

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BCF240T BCF240T HIGH EFFICIENCY HETEROJUNCTION POWER FET BeRex

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