BCF240T Datasheet, fet equivalent, BeRex

BCF240T Features

• Fet
• 30.4 dBm Typical Output Power
• 9.8 dB Typical Power Gain @ 12 GHz
• Low Phase Noise
• 0.3 X 2400 Micron Recessed Gate Applications
• Commercia

PDF File Details

Part number:

BCF240T

Manufacturer:

BeRex

File Size:

410.63kb

Download:

📄 Datasheet

Description:

High efficiency heterojunction power fet.

BCF240T Application

• Applications requiring high OIP3 linearity and low phase noise while providing high-gain and medium power from DC to 26.5 GHz. This product is well

TAGS

BCF240T

BeRex

📁 Related Datasheet

BCF29 - PNP general purpose transistors (NXP)
DISCRETE SEMICONDUCTORS .. DATA SHEET book, halfpage M3D088 BCF29; BCF30 PNP general purpose transistors Product specification Supe.

BCF29 - Surface mount Si-Epitaxial PlanarTransistors (Diotec Semiconductor)
BCF 29, BFC 30 PNP .. General Purpose Transistors PNP Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren .

BCF29 - (BCF29 / BCF30) PNP General Purpose Transistors (Guangdong Kexin)
SMD Type .. Transistors IC PNP General Purpose Transistors BCF29,BCF30 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Unit: mm +0.1 2.4-0.1 Low.

BCF020T - HIGH EFFICIENCY HETEROJUNCTION POWER FET (BeRex)
BCF020T HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 200 µm) The BeRex BCF020T is a GaAs Power MESFET whose nominal 0.3 micron gate length a.

BCF030T - HIGH EFFICIENCY HETEROJUNCTION POWER FET (BeRex)
BCF030T HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 300 µm) The BeRex BCF030T is a GaAs Power MESFET whose nominal 0.3 micron gate length a.

BCF040T - HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (BeRex)
BCF040T HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 400 µm) The BeRex BCF040T is a GaAs Power MESFET whose nominal 0.3 micron gate length a.

BCF060T - HIGH EFFICIENCY HETEROJUNCTION POWER FET (BeRex)
BCF060T HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 600 µm) The BeRex BCF060T is a GaAs Power MESFET whose nominal 0.3 micron gate length a.

BCF080T - HIGH EFFICIENCY HETEROJUNCTION POWER FET (BeRex)
BCF080T HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 800 µm) The BeRex BCF080T is a GaAs Power MESFET whose nominal 0.3 micron gate length a.

BCF120T - HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (BeRex)
BCF120T HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 1200 µm) The BeRex BCF120T is a GaAs Power MESFET whose nominal 0.3 micron gate length .

BCF30 - PNP general purpose transistors (NXP)
DISCRETE SEMICONDUCTORS .. DATA SHEET book, halfpage M3D088 BCF29; BCF30 PNP general purpose transistors Product specification Supe.