HETEROJUNCTION Datasheet | Specifications & PDF Download

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Excelics DATA SHEET • • • • • • +31.0dBm TYPICAL OUTPUT POWER 5.5dB TYPICAL POWER GAIN AT 18GHz 0.3 X 1600 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSI

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Excelics DATA SHEET EPA018BV High Efficiency Heterojunction Power FET • • • • • • • • VERY HIGH fmax: 120GHz +20.0dBm TYPICAL OUTPUT POWER 13.0dB TY

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Excelics • • • • • EPB018A5/A7/A9-70 DATA SHEET Super Low Noise High Gain Heterojunction FET NON-HERMETIC LOW COST CERAMIC 70 mil PACKAGE TYPICAL 0.

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BCF080T HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 800 µm) The BeRex BCF080T is a GaAs Power MESFET whose nominal 0.3 micron gate length a

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Excelics • • • • • • • EPA160A/EPA160AV www.DataSheet4U.com DATA SHEET High Efficiency Heterojunction Power FET +31.0dBm TYPICAL OUTPUT POWER 8.5dB

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LIFETIME BUY LAST ORDER 24 MAY 14 LAST SHIP 24 MAY 15 Freescale Semiconductor Technical Data Heterojunction Bipolar Transistor (InGaP HBT) Broadband

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BCP120C HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.25µm x 1200µm) The BeRex BCP120C is a GaAs Power pHEMT with a nominal 0.25-micron by 1200-micr

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HLMP-D101/D105, HLMP-K101/K105 T-1¾ (5 mm), T-1 (3 mm), High Intensity, Double Heterojunction AlGaAs Red LED Lamps Data Sheet Description These soli

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Excelics DATA SHEET • • • • • • +29.5dBm TYPICAL OUTPUT POWER 9.5dB TYPICAL POWER GAIN AT 18GHz 0.3 X 1200 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSI

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Excelics DATA SHEET Features • • • • • LOW COST SURFACE-MOUNT PLASTIC PACKAGE +36dBm TYPICAL OUTPUT POWER 13.0dB TYPICAL POWER GAIN AT 2GHz 0.5dB TYPI

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BCF060T HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 600 µm) The BeRex BCF060T is a GaAs Power MESFET whose nominal 0.3 micron gate length a

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BCF030T HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 300 µm) The BeRex BCF030T is a GaAs Power MESFET whose nominal 0.3 micron gate length a

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DOUBLE HETEROJUNCTION AlGaAs RED SUNLIGHT VIEWABLE DISPLAYS DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOT

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Freescale Semiconductor Technical Data Heterojunction Bipolar Transistor Technology (InGaP HBT) Broadband High Linearity Amplifier The MMG3012NT1 is a

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BCP030C-70 HIGH EFFICIENCY HETEROJUNCTION POWER FET (0.25µm x 300µm gate) The BeRex BCP030T-70 is a GaAs Power pHEMT in an industry standard, 70 mils.

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BCF020T HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 200 µm) The BeRex BCF020T is a GaAs Power MESFET whose nominal 0.3 micron gate length a

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