BCF060T Datasheet - BeRex

BCF060T - HIGH EFFICIENCY HETEROJUNCTION POWER FET

BCF060T HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 600 µm) The BeRex BCF060T is a GaAs Power MESFET whose nominal 0.3 micron gate length and 600 micron gate width make the product ideally suited to applications requiring high OIP3 linearity and low phase noise while providing high-gain and medium power from DC to 26.5 GHz. This product is well suited for either wideband or narrow-band applications. The BCF060T is produced using state of the art metallization and devices from each waf.

BCF060T Features

* 25.0 dBm Typical Output Power

* 12.5 dB Typical Power Gain @ 12 GHz

* Low Phase Noise

* 0.3 X 600 Micron Recessed Gate Applications

* Commercial

* Military / Hi-Rel

* Test & Measurement DC CHARACTERISTIC (Ta = 25° C) PARAMETER/TEST CONDITIO

BCF060T-BeRex.pdf