* 25.0 dBm Typical Output Power
* 12.5 dB Typical Power Gain @ 12 GHz
* Low Phase Noise
* 0.3 X 600 Micron Recessed Gate Applications
* Commercial
* Military / Hi-Rel
* Test & Measurement DC CHARACTERISTIC (Ta = 25° C) PARAMETER/TEST CONDITIO
BCF060T
BeRex
376.94 KB
High efficiency heterojunction power fet.
BCF060T
HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 600 µm)
The BeRex BCF060T is a GaAs Power MESFET whose nominal 0.3 micron gate length a.
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