BCF060T Datasheet - BeRex

BCF060T HIGH EFFICIENCY HETEROJUNCTION POWER FET

BCF060T HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 600 µm) The BeRex BCF060T is a GaAs Power MESFET whose nominal 0.3 micron gate length and 600 micron gate width make the product ideally suited to applications requiring high OIP3 linearity and low phase noise while providing high-gain and medium power from DC to 26.5 GHz. This product is well suited for either wideband or narrow-band applications. The BCF060T is produced using state of the art metallization and devices from each waf.

BCF060T Features

* 25.0 dBm Typical Output Power

* 12.5 dB Typical Power Gain @ 12 GHz

* Low Phase Noise

* 0.3 X 600 Micron Recessed Gate Applications

* Commercial

* Military / Hi-Rel

* Test & Measurement DC CHARACTERISTIC (Ta = 25° C) PARAMETER/TEST CONDITIO

BCF060T-BeRex.pdf

BCF060T Datasheet Preview — Preview of BCF060T PDF

Datasheet Details

Part number:

BCF060T

Manufacturer:

BeRex

File Size:

376.94 KB

Description:

High efficiency heterojunction power fet.

📁 Related Datasheet

BCF020T HIGH EFFICIENCY HETEROJUNCTION POWER FET (BeRex)

BCF030T HIGH EFFICIENCY HETEROJUNCTION POWER FET (BeRex)

BCF040T HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (BeRex)

BCF080T HIGH EFFICIENCY HETEROJUNCTION POWER FET (BeRex)

BCF120T HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (BeRex)

BCF240T HIGH EFFICIENCY HETEROJUNCTION POWER FET (BeRex)

BCF29 PNP general purpose transistors (NXP)

BCF29 Surface mount Si-Epitaxial PlanarTransistors (Diotec Semiconductor)

TAGS

BCF060T BCF060T HIGH EFFICIENCY HETEROJUNCTION POWER FET BeRex

BCF060T Distributor