BCF060T Datasheet - BeRex

BCF060T, HIGH EFFICIENCY HETEROJUNCTION POWER FET

BCF060T HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 600 µm) The BeRex BCF060T is a GaAs Power MESFET whose nominal 0.3 micron gate length a.

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BCF060T-BeRex.pdf

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Datasheet Details

Part number:

BCF060T

Manufacturer:

BeRex

File Size:

376.94 KB

Description:

HIGH EFFICIENCY HETEROJUNCTION POWER FET

Features

* 25.0 dBm Typical Output Power
* 12.5 dB Typical Power Gain @ 12 GHz
* Low Phase Noise

Applications

* requiring high OIP3 linearity and low phase noise while providing high-gain and medium power from DC to 26.5 GHz. This product is well suited for either wideband or narrow-band applications. The BCF060T is produced using state of the art metallization and devices from each wafer are screened to insu

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BCF060T HIGH EFFICIENCY HETEROJUNCTION POWER FET BeRex

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