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BCF030T

HIGH EFFICIENCY HETEROJUNCTION POWER FET

BCF030T Features

* 21.5 dBm Typical Output Power

* 13.5 dB Typical Power Gain @ 12 GHz

* Low Phase Noise

* 0.3 X 300 Micron Recessed Gate Applications

* Commercial

* Military / Hi-Rel

* Test & Measurement DC CHARACTERISTIC (Ta = 25° C) PARAMETER/TEST CONDITION

BCF030T Datasheet (378.67 KB)

Preview of BCF030T PDF

Datasheet Details

Part number:

BCF030T

Manufacturer:

BeRex

File Size:

378.67 KB

Description:

High efficiency heterojunction power fet.
BCF030T HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 300 µm) The BeRex BCF030T is a GaAs Power MESFET whose nominal 0.3 micron gate length a.

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TAGS

BCF030T HIGH EFFICIENCY HETEROJUNCTION POWER FET BeRex

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