BCF030T Datasheet - BeRex

BCF030T HIGH EFFICIENCY HETEROJUNCTION POWER FET

BCF030T HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 300 µm) The BeRex BCF030T is a GaAs Power MESFET whose nominal 0.3 micron gate length and 300 micron gate width make the product ideally suited to applications requiring high OIP3 linearity and low phase noise while providing high-gain and medium power from DC to 26.5 GHz frequency range. This product is well suited for either wideband or narrow-band applications. The BCF030T is produced using state of the art metallization and devic.

BCF030T Features

* 21.5 dBm Typical Output Power

* 13.5 dB Typical Power Gain @ 12 GHz

* Low Phase Noise

* 0.3 X 300 Micron Recessed Gate Applications

* Commercial

* Military / Hi-Rel

* Test & Measurement DC CHARACTERISTIC (Ta = 25° C) PARAMETER/TEST CONDITION

BCF030T-BeRex.pdf

BCF030T Datasheet Preview — Preview of BCF030T PDF

Datasheet Details

Part number:

BCF030T

Manufacturer:

BeRex

File Size:

378.67 KB

Description:

High efficiency heterojunction power fet.

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BCF030T BCF030T HIGH EFFICIENCY HETEROJUNCTION POWER FET BeRex

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