BCF29 Datasheet, Transistors, NXP

BCF29 Features

  • Transistors
  • Low current (max. 100 mA)
  • Low voltage (max. 32 V). APPLICATIONS
  • Low level, low noise general purpose applications in thick and thin-film circuits. handbook

PDF File Details

Part number:

BCF29

Manufacturer:

NXP ↗

File Size:

86.13kb

Download:

📄 Datasheet

Description:

Pnp general purpose transistors. 3 3 1 2 1 2 MAM256 DESCRIPTION PNP transistor in a SOT23 plastic package. NPN complements: BCF32 and BCF33. MARKING TYPE NUMBER BCF

Datasheet Preview: BCF29 📥 Download PDF (86.13kb)
Page 2 of BCF29 Page 3 of BCF29

BCF29 Application

  • Applications
  • Low level, low noise general purpose applications in thick and thin-film circuits. handbook, halfpage BCF29; BCF30 PINNING P

TAGS

BCF29
PNP
general
purpose
transistors
NXP

📁 Related Datasheet

BCF240T - HIGH EFFICIENCY HETEROJUNCTION POWER FET (BeRex)
BCF240T HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 2400 µm) The BeRex BCF240T is a GaAs Power MESFET whose nominal 0.3 micron gate length .

BCF29 - Surface mount Si-Epitaxial PlanarTransistors (Diotec Semiconductor)
BCF 29, BFC 30 PNP .. General Purpose Transistors PNP Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren .

BCF29 - (BCF29 / BCF30) PNP General Purpose Transistors (Guangdong Kexin)
SMD Type .. Transistors IC PNP General Purpose Transistors BCF29,BCF30 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Unit: mm +0.1 2.4-0.1 Low.

BCF020T - HIGH EFFICIENCY HETEROJUNCTION POWER FET (BeRex)
BCF020T HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 200 µm) The BeRex BCF020T is a GaAs Power MESFET whose nominal 0.3 micron gate length a.

BCF030T - HIGH EFFICIENCY HETEROJUNCTION POWER FET (BeRex)
BCF030T HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 300 µm) The BeRex BCF030T is a GaAs Power MESFET whose nominal 0.3 micron gate length a.

BCF040T - HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (BeRex)
BCF040T HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 400 µm) The BeRex BCF040T is a GaAs Power MESFET whose nominal 0.3 micron gate length a.

BCF060T - HIGH EFFICIENCY HETEROJUNCTION POWER FET (BeRex)
BCF060T HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 600 µm) The BeRex BCF060T is a GaAs Power MESFET whose nominal 0.3 micron gate length a.

BCF080T - HIGH EFFICIENCY HETEROJUNCTION POWER FET (BeRex)
BCF080T HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 800 µm) The BeRex BCF080T is a GaAs Power MESFET whose nominal 0.3 micron gate length a.

BCF120T - HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (BeRex)
BCF120T HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 1200 µm) The BeRex BCF120T is a GaAs Power MESFET whose nominal 0.3 micron gate length .

BCF30 - PNP general purpose transistors (NXP)
DISCRETE SEMICONDUCTORS .. DATA SHEET book, halfpage M3D088 BCF29; BCF30 PNP general purpose transistors Product specification Supe.

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts