BCF120T Datasheet - BeRex

BCF120T HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP

BCF120T HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 1200 µm) The BeRex BCF120T is a GaAs Power MESFET whose nominal 0.3 micron gate length and 1200 micron gate width make the product ideally suited to applications requiring high OIP3 linearity and low phase noise while providing high-gain and medium power from DC to 26.5 GHz. This product is well suited for either wideband or narrow-band applications. The BCF120T is produced using state of the art metallization and devices from each w.

BCF120T Features

* 28.0 dBm Typical Output Power

* 11.0 dB Typical Power Gain @ 12 GHz

* Low Phase Noise

* 0.3 X 1200 Micron Recessed Gate Applications

* Commercial

* Military / Hi-Rel

* Test & Measurement ELECTRICAL CHARACTERISTIC (Ta = 25° C) PARAMETER/TEST

BCF120T Datasheet (378.87 KB)

BCF120T Datasheet Preview — Preview of BCF120T PDF

Datasheet Details

Part number:

BCF120T

Manufacturer:

BeRex

File Size:

378.87 KB

Description:

High efficiency heterojunction power fet chip.

📁 Related Datasheet

BCF020T HIGH EFFICIENCY HETEROJUNCTION POWER FET (BeRex)

BCF030T HIGH EFFICIENCY HETEROJUNCTION POWER FET (BeRex)

BCF040T HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (BeRex)

BCF060T HIGH EFFICIENCY HETEROJUNCTION POWER FET (BeRex)

BCF080T HIGH EFFICIENCY HETEROJUNCTION POWER FET (BeRex)

BCF240T HIGH EFFICIENCY HETEROJUNCTION POWER FET (BeRex)

BCF29 PNP general purpose transistors (NXP)

BCF29 Surface mount Si-Epitaxial PlanarTransistors (Diotec Semiconductor)

BCF29 (BCF29 / BCF30) PNP General Purpose Transistors (Guangdong Kexin)

BCF30 PNP general purpose transistors (NXP)

TAGS

BCF120T HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP BeRex

Image Gallery

BCF120T Distributor