BCF120T Datasheet - BeRex

BCF120T, HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP

BCF120T HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 1200 µm) The BeRex BCF120T is a GaAs Power MESFET whose nominal 0.3 micron gate length .

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Datasheet Details

Part number:

BCF120T

Manufacturer:

BeRex

File Size:

378.87 KB

Description:

HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP

Features

* 28.0 dBm Typical Output Power
* 11.0 dB Typical Power Gain @ 12 GHz
* Low Phase Noise

Applications

* requiring high OIP3 linearity and low phase noise while providing high-gain and medium power from DC to 26.5 GHz. This product is well suited for either wideband or narrow-band applications. The BCF120T is produced using state of the art metallization and devices from each wafer are screened to insu

BCF120T Distributors

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BCF120T HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP BeRex

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