* 28.0 dBm Typical Output Power
* 11.0 dB Typical Power Gain @ 12 GHz
* Low Phase Noise
* 0.3 X 1200 Micron Recessed Gate Applications
* Commercial
* Military / Hi-Rel
* Test & Measurement ELECTRICAL CHARACTERISTIC (Ta = 25° C) PARAMETER/TEST
BCF120T
BeRex
378.87 KB
High efficiency heterojunction power fet chip.
BCF120T
HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 1200 µm)
The BeRex BCF120T is a GaAs Power MESFET whose nominal 0.3 micron gate length .
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