BCF080T Datasheet - BeRex

BCF080T HIGH EFFICIENCY HETEROJUNCTION POWER FET

BCF080T HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 800 µm) The BeRex BCF080T is a GaAs Power MESFET whose nominal 0.3 micron gate length and 800 micron gate width make the product ideally suited to applications requiring high OIP3 linearity and low phase noise while providing high-gain and medium power from DC to 26.5 GHz. This product is well suited for either wideband or narrow-band applications. The BCF080T is produced using state of the art metallization and devices from each waf.

BCF080T Features

* 26.0 dBm Typical Output Power

* 11.0 dB Typical Power Gain @ 12 GHz

* Low Phase Noise

* 0.3 X 800 Micron Recessed Gate Applications

* Commercial

* Military / Hi-Rel

* Test & Measurement DC CHARACTERISTIC (Ta = 25° C) PARAMETER/TEST CONDITION

BCF080T-BeRex.pdf

BCF080T Datasheet Preview — Preview of BCF080T PDF

Datasheet Details

Part number:

BCF080T

Manufacturer:

BeRex

File Size:

378.33 KB

Description:

High efficiency heterojunction power fet.

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BCF080T BCF080T HIGH EFFICIENCY HETEROJUNCTION POWER FET BeRex

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