* 26.0 dBm Typical Output Power
* 11.0 dB Typical Power Gain @ 12 GHz
* Low Phase Noise
* 0.3 X 800 Micron Recessed Gate Applications
* Commercial
* Military / Hi-Rel
* Test & Measurement DC CHARACTERISTIC (Ta = 25° C) PARAMETER/TEST CONDITION
BCF080T
BeRex
378.33 KB
High efficiency heterojunction power fet.
BCF080T
HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 800 µm)
The BeRex BCF080T is a GaAs Power MESFET whose nominal 0.3 micron gate length a.
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