BCF080T Datasheet - BeRex

BCF080T, HIGH EFFICIENCY HETEROJUNCTION POWER FET

BCF080T HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 800 µm) The BeRex BCF080T is a GaAs Power MESFET whose nominal 0.3 micron gate length a.

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BCF080T-BeRex.pdf

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Datasheet Details

Part number:

BCF080T

Manufacturer:

BeRex

File Size:

378.33 KB

Description:

HIGH EFFICIENCY HETEROJUNCTION POWER FET

Features

* 26.0 dBm Typical Output Power
* 11.0 dB Typical Power Gain @ 12 GHz
* Low Phase Noise

Applications

* requiring high OIP3 linearity and low phase noise while providing high-gain and medium power from DC to 26.5 GHz. This product is well suited for either wideband or narrow-band applications. The BCF080T is produced using state of the art metallization and devices from each wafer are screened to insu

BCF080T Distributors

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