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CS15N04AEP-G Silicon N-Channel Trench MOSFET

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Description

Silicon N-Channel Trench MOSFET ○R CS15N04 AEP-G General .
CS15N04 AEP-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced trench Technology which reduce the conduction loss, improve switchin.

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Datasheet Specifications

Part number
CS15N04AEP-G
Manufacturer
CR Micro
File Size
454.37 KB
Datasheet
CS15N04AEP-G-CRMicro.pdf
Description
Silicon N-Channel Trench MOSFET

Applications

* Power switch circuit of adaptor and charger. Absolute(TA= 25℃ unless otherwise specified): Symbol Parameter VDSS ID IDMa1 VGS EAS a2 PD TJ,Tstg Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TA = 100 °C Pulsed Drain Current Gate-to-Source Voltage Single Pulse Avalan

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