CS15N04AEP-G Datasheet - CR Micro

CS15N04AEP-G Silicon N-Channel Trench MOSFET

CS15N04 AEP-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced trench Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher ef.

CS15N04AEP-G Features

* l Fast Switching l Low ON Resistance (Rdson≤13mΩ) l Low Reverse transfer capacitances(Typical:115pF) l 100% Single Pulse avalanche energy Test l Halogen free 40 V 15 A 3.1 W 8 mΩ Applications： Power switch circuit of adaptor and charger. Absolute（TA= 25℃ unless otherwise specified）： Sym

CS15N04AEP-G-CRMicro.pdf