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CS15N50FA9R Datasheet - Huajing Microelectronics

CS15N50FA9R Silicon N-Channel Power MOSFET

CS15N50F A9R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and VDSS ID PD(TC=25℃) RDS(ON)Typ 500 15 70 0.3 enhance the avalanche energy. The transistor can be used in various power swi.

CS15N50FA9R Features

* l Fast Switching l Low ON Resistance(Rdson≤0.4Ω) l Low Gate Charge (Typical Data:50nC) l Low Reverse transfer capacitances(Typical:25.5pF) l 100% Single Pulse avalanche energy Test Applications： Automotive、DC Motor Control and Class D Amplifier. Absolute（Tc= 25℃ unless otherwise specified）： Symbol

CS15N50FA9R-HuajingMicroelectronics.pdf

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Datasheet Details

Part number:

CS15N50FA9R

Manufacturer:

Huajing Microelectronics

File Size:

231.18 KB

Description:

Silicon n-channel power mosfet.

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