CS7N80FA9R Datasheet - CR Micro

CS7N80FA9R Silicon N-Channel Power MOSFET

CS7N80F A9R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and hig.

CS7N80FA9R Features

* l Fast Switching l Low ON Resistance(Rdson≤1.8Ω) l Low Gate Charge (Typical Data: 33.9nC) l Low Reverse transfer capacitances(Typical:11.2pF) l 100% Single Pulse avalanche energy Test VDSS ID PD(TC=25℃) RDS(ON)Typ 800 V 7 A 33 W 1.5 Ω Applications： Power switch circuit of adaptor and cha

CS7N80FA9R-CRMicro.pdf