CS7N80FA9RZ-G - Silicon N-Channel Power MOSFET
CS7N80F A9RZ-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit for system miniaturizatio
CS7N80FA9RZ-G Features
* Fast Switching
* Low ON Resistance(Rdson≤1.8Ω)
* Low Gate Charge (Typical Data: 33.9nC)
* Low Reverse transfer capacitances(Typical:11.2pF)
* 100% Single Pulse avalanche energy Test
* Halogen Free Applications： Power switch circuit of adaptor and charger. Absolute（T
