CS7N80FA9RZ-G Datasheet - CR Micro

CS7N80FA9RZ-G Silicon N-Channel Power MOSFET

CS7N80F A9RZ-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturizatio.

CS7N80FA9RZ-G Features

* Fast Switching

* Low ON Resistance(Rdson≤1.8Ω)

* Low Gate Charge (Typical Data: 33.9nC)

* Low Reverse transfer capacitances(Typical:11.2pF)

* 100% Single Pulse avalanche energy Test

* Halogen Free Applications： Power switch circuit of adaptor and charger. Absolute（T

CS7N80FA9RZ-G-CRMicro.pdf