CS7N80FA9 Silicon N-Channel Power MOSFET

Huajing Microelectronics

Description

Silicon N-Channel Power MOSFET CS7N80F A9 ○R General .
CS7N80F A9, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve swi.

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Datasheet Specifications

Part number: CS7N80FA9
Manufacturer: Huajing Microelectronics
File Size: 302.82 KB
Datasheet: CS7N80FA9-HuajingMicroelectronics.pdf
Description: Silicon N-Channel Power MOSFET

Applications

* ATX Power、LED Power. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3 PD TJ，Tstg TL Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-S

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CS7N80FA9R CS7N80FA9RZ-G CS7N80A8R CS7N80ARR-G CS7N03AE-1 CS7N10AQ2-1

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CS7N80FA9 Silicon N-Channel Power MOSFET Huajing Microelectronics

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