CS7N80FA9 Datasheet - Huajing Microelectronics

CS7N80FA9 Silicon N-Channel Power MOSFET

CS7N80F A9, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and high.

CS7N80FA9 Features

* l Fast Switching l Low ON Resistance(Rdson≤1.8Ω ) l Low Gate Charge (Typical Data:34nC) l Low Reverse transfer capacitances(Typical:12pF) l 100% Single Pulse avalanche energy Test Applications： ATX Power、LED Power. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS E

CS7N80FA9-HuajingMicroelectronics.pdf