CS7N80FA9 - Silicon N-Channel Power MOSFET
CS7N80F A9, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit for system miniaturization and high
CS7N80FA9 Features
* l Fast Switching l Low ON Resistance(Rdson≤1.8Ω ) l Low Gate Charge (Typical Data:34nC) l Low Reverse transfer capacitances(Typical:12pF) l 100% Single Pulse avalanche energy Test Applications： ATX Power、LED Power. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS E
