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HGP017N03A-G - Silicon N-Channel Power MOSFET

Description

HGP017N03A-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

This device is suitable for use as A load switch and PWM applications.

Features

  • Fast Switching.
  • Low ON Resistance.
  • Low Gate Charge.
  • Low Reverse transfer capacitances.
  • 100% Single Pulse avalanche energy Test.
  • Halogen Free.

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Datasheet Details

Part number HGP017N03A-G
Manufacturer CR Micro
File Size 703.09 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet HGP017N03A-G Datasheet
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Silicon N-Channel Power MOSFET HGP017N03A-G General Description： HGP017N03A-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This device is suitable for use as A load switch and PWM applications. the package form is TO-220, which accords with the RoHS standard. Features： ● Fast Switching ● Low ON Resistance ● Low Gate Charge ● Low Reverse transfer capacitances ● 100% Single Pulse avalanche energy Test ● Halogen Free Applications： Power switch circuit of adaptor and charger. VDSS ID（Silicon limited） ID（Package limited） PD RDS(ON)Typ ® 30 V 260 A 120 A 162.3 W 1.
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