HGP026N03A Datasheet - CR Micro

HGP026N03A Silicon N-Channel Power MOSFET

HGP026N03A, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This device is suitable for use as A load switch and PWM applications. the package form is TO-220.

HGP026N03A Features

* Fast Switching

* Low ON Resistance

* Low Gate Charge

* Low Reverse transfer capacitances

* 100% Single Pulse avalanche energy Test VDSS ID（Silicon limited） ID（Package limited） PD RDS(ON)Typ Applications： Power switch circuit of adaptor and charger. ® 30 V 170 A 90 A 10

HGP026N03A-CRMicro.pdf