CMPA601C025F Datasheet - CREE

CMPA601C025F GaN MMIC Power Amplifier

CMPA601C025F 25 W, 6.0 - 12.0 GHz, GaN MMIC, Power Amplifier The CMPA601C025F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) on a silicon carbide (SiC) substrate, using a 0.25 μm gate length fabrication process. The semiconductor offers 25 Watts of power from 6 to 12 GHz of instantaneous bandwidth. The GaN HEMT MMIC is housed in a thermally-enhanced, 10lead 25 mm x 9.9 mm metal/ceramic flanged package. It offers high gain .

CMPA601C025F Features

* 34 dB Small Signal Gain

* 40 W Typical PSAT

* Operation up to 28 V

* High

CMPA601C025F-CREE.pdf