Datasheet Details
| Part number | CS7N10AQ2-1 |
|---|---|
| Manufacturer | CR Micro |
| File Size | 478.03 KB |
| Description | Silicon N-Channel Power MOSFET |
| Datasheet |
 CS7N10AQ2-1-CRMicro.pdf
|
| Part number | CS7N10AQ2-1 |
|---|---|
| Manufacturer | CR Micro |
| File Size | 478.03 KB |
| Description | Silicon N-Channel Power MOSFET |
| Datasheet |
CS7N10AQ2-1-CRMicro.pdf
|
CS7N10 AQ2-1, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching VDSS ID PD RDS(ON)Typ 100 V 7 A 16.8 W 113 mΩ performance and enhance the avalanche energy.This device is suitable for use as a load switch and PWM applications..The package form is DFN3×3-8L, which accords with the RoHS standard..
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