* Low Gate Charge
* Simple Drive Requirement
* ESD protected gate, HBM 6kV, typically
* Pb-free lead plating & Halogen-free package BVDSS ID @ VGS=10V, TA=25°C RDSON@VGS=10V, ID=2A RDSON@VGS=4.5V, ID=1A 200V 1A 830mΩ (typ.) 777mΩ (typ.) Equivalent Circuit MTB1K0N20
MTB1K0N20KL3 Datasheet (442.63 KB)
MTB1K0N20KL3
CYStech
442.63 KB
N-channel enhancement mode power mosfet.
CYStech Electronics Corp.
N-Channel Enhancement Mode MOSFET
MTB1K0N20KL3
Spec. No. : C043L3 Issued Date : 2017.07.03 Revised Date : 2018.02.09 Page N.
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