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MTB1K0N20KL3 N-Channel Enhancement Mode Power MOSFET

MTB1K0N20KL3 Description

CYStech Electronics Corp.N-Channel Enhancement Mode MOSFET MTB1K0N20KL3 Spec.No.: C043L3 Issued Date : 2017.07.03 Revised Date : 2018.02.09 Page N.

MTB1K0N20KL3 Features

* Low Gate Charge
* Simple Drive Requirement
* ESD protected gate, HBM 6kV, typically
* Pb-free lead plating & Halogen-free package BVDSS ID @ VGS=10V, TA=25°C RDSON@VGS=10V, ID=2A RDSON@VGS=4.5V, ID=1A 200V 1A 830mΩ (typ. ) 777mΩ (typ. ) Equivalent Circuit MTB1K0N20

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Datasheet Details

Part number
MTB1K0N20KL3
Manufacturer
CYStech
File Size
442.63 KB
Datasheet
MTB1K0N20KL3-CYStech.pdf
Description
N-Channel Enhancement Mode Power MOSFET

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N-Channel Enhancement Mode Power MOSFET CYStech
CYStech MTB1K0N20KL3-like datasheet