MTEH0N20L3 N-Channel Enhancement Mode Power MOSFET

CYStech

Description

CYStech Electronics Corp.Spec.No.: C882L3 Issued Date : 2012.11.16 Revised Date : 2012.12.19 Page No.: 1/8 N-Channel Enhancement Mode MOSFET MTE.

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Datasheet Specifications

Part number: MTEH0N20L3
Manufacturer: CYStech
File Size: 246.72 KB
Datasheet: MTEH0N20L3-CYStech.pdf
Description: N-Channel Enhancement Mode Power MOSFET

Features

* Single Drive Requirement
* Low On-resistance
* Fast Switching Characteristic
* Pb-free lead plating and halogen-free package BVDSS ID RDSON@VGS=10V, ID=0.5A RDSON@VGS=5V, ID=0.1A 200V 1A 0.98Ω (typ) 0.97Ω (typ) Symbol MTEH0N20L3 Outline SOT-223 G：Gate S：Source

Applications

* or systems.
* CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTEH0N20L3 CYStek Product Specification

MTEH0N20L3 Distributors

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MTEH0N20L3 N-Channel Enhancement Mode Power MOSFET CYStech

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