* Single Drive Requirement
* Low On-resistance
* Fast Switching Characteristic
* Pb-free lead plating and halogen-free package BVDSS ID RDSON@VGS=10V, ID=0.5A RDSON@VGS=5V, ID=0.1A 200V 1A 0.98Ω (typ) 0.97Ω (typ) Symbol MTEH0N20L3 Outline SOT-223 G：Gate S：Source
MTEH0N20L3 Datasheet (246.72 KB)
MTEH0N20L3
CYStech
246.72 KB
N-channel enhancement mode power mosfet.
CYStech Electronics Corp. Spec. No. : C882L3 Issued Date : 2012.11.16 Revised Date : 2012.12.19 Page No. : 1/8 N-Channel Enhancement Mode MOSFET MTE.
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