MX2319 - P-Channel Enhancement Mode Power MOSFET
MX2319 Features
* VDS >=-18V,ID = -7A k RDS(ON)(Typ.) =17mΩ@ VGS=-4.5V RDS(ON) (Typ.)= 22mΩ @ VGS=-2.5V e Asvanced trench MOSFET process technology T Ultra low on-resistance with low gate charge e Application c
* PWM applications r
* Load switch D Schematic diagram 3 2319 1 2 Marking and pin Assignmen
