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CY7C1170KV18, CY7C1168KV18 18-Mbit DDR II+ SRAM Two-Word Burst Architecture

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Description

CY7C1168KV18/CY7C1170KV18 18-Mbit DDR II+ SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency) 18-Mbit DDR II+ SRAM Two-Word Burst Architecture .

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This datasheet PDF includes multiple part numbers: CY7C1170KV18, CY7C1168KV18. Please refer to the document for exact specifications by model.
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Datasheet Specifications

Part number
CY7C1170KV18, CY7C1168KV18
Manufacturer
Cypress Semiconductor
File Size
605.44 KB
Datasheet
CY7C1168KV18-CypressSemiconductor.pdf
Description
18-Mbit DDR II+ SRAM Two-Word Burst Architecture
Note
This datasheet PDF includes multiple part numbers: CY7C1170KV18, CY7C1168KV18.
Please refer to the document for exact specifications by model.

Features

* 18-Mbit density (1M × 18, 512K × 36)
* 550-MHz clock for high bandwidth
* Two-word burst for reducing address bus frequency
* Double data rate (DDR) interfaces (data transferred at 1100 MHz) at 550 MHz
* Available in 2.5 clock cycle latency
* Two input clocks (K and K) for

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