CY7C1141V18 (CY7C11xxV18) SRAM 4-Word Burst Architecture

Cypress Semiconductor

Description

CY7C1141V18 CY7C1156V18 CY7C1143V18 CY7C1145V18 18-Mbit QDR™-II+ SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency) .
The CY7C1141V18, CY7C1156V18, CY7C1143V18, and CY7C1145V18 are 1.

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Datasheet Specifications

Part number: CY7C1141V18
Manufacturer: Cypress Semiconductor
File Size: 1.18 MB
Datasheet: CY7C1141V18_CypressSemiconductor.pdf
Description: (CY7C11xxV18) SRAM 4-Word Burst Architecture

Features

* Separate Independent read and write data ports
* Supports concurrent transactions
* 300 MHz to 375 MHz clock for high bandwidth
* 4-Word Burst for reducing address bus frequency
* Double Data Rate (DDR) interfaces on both read and write ports (data transferred at 750 MHz) at 375 MHz

CY7C1141V18 Distributors

📁 Related Datasheet

CY7C1006D CY7C1011G CY7C1041G CY7C1041GE CY7C1041GN CY7C1049GN

📌 All Tags

CY7C1141V18 CY7C11xxV18 SRAM 4-Word Burst Architecture Cypress Semiconductor

Cypress Semiconductor CY7C1141V18-like datasheet