CY7C1141V18 Datasheet - Cypress Semiconductor

CY7C1141V18, (CY7C11xxV18) SRAM 4-Word Burst Architecture

CY7C1141V18 CY7C1156V18 CY7C1143V18 CY7C1145V18 18-Mbit QDR™-II+ SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency) .
The CY7C1141V18, CY7C1156V18, CY7C1143V18, and CY7C1145V18 are 1.

datasheet Preview Page 1 from Datasheet4u.com

CY7C1141V18_CypressSemiconductor.pdf

CY7C1141V18 Datasheet Preview — Preview of CY7C1141V18 PDF

Datasheet Details

Part number:

CY7C1141V18

Manufacturer:

Cypress Semiconductor

File Size:

1.18 MB

Description:

(CY7C11xxV18) SRAM 4-Word Burst Architecture

Features

* Separate Independent read and write data ports
* Supports concurrent transactions
* 300 MHz to 375 MHz clock for high bandwidth
* 4-Word Burst for reducing address bus frequency
* Double Data Rate (DDR) interfaces on both read and write ports (data transferred at 750 MHz) at 375 MHz

CY7C1141V18 Distributors

📁 Related Datasheet

CY7C1006D CY7C1011G CY7C1041G CY7C1041GE CY7C1041GN CY7C1049GN

📌 All Tags

CY7C1141V18 CY7C11xxV18 SRAM 4-Word Burst Architecture Cypress Semiconductor

Cypress Semiconductor CY7C1141V18-like datasheet