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CY7C1145KV18, CY7C1143KV18 18-Mbit QDR II+ SRAM Four-Word Burst Architecture

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Description

 CY7C1143KV18/CY7C1145KV18 18-Mbit QDR® II+ SRAM Four-Word Burst Architecture (2.0 Cycle Read Latency) 18-Mbit QDR® II+ SRAM Four-Word Burst Archite.

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This datasheet PDF includes multiple part numbers: CY7C1145KV18, CY7C1143KV18. Please refer to the document for exact specifications by model.
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Datasheet Specifications

Part number
CY7C1145KV18, CY7C1143KV18
Manufacturer
Cypress Semiconductor
File Size
646.01 KB
Datasheet
CY7C1143KV18-CypressSemiconductor.pdf
Description
18-Mbit QDR II+ SRAM Four-Word Burst Architecture
Note
This datasheet PDF includes multiple part numbers: CY7C1145KV18, CY7C1143KV18.
Please refer to the document for exact specifications by model.

Features

* Separate independent read and write data ports
* Supports concurrent transactions
* 450-MHz clock for high bandwidth
* Four-word burst for reducing address bus frequency
* Double data rate (DDR) Interfaces on both read and write ports (data transferred at 900 MHz) at 450 MHz

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