CY7C1420KV18, CY7C1418KV18 - 36-Mbit DDR II SRAM Two-Word Burst Architecture

Cypress Semiconductor

Datasheet Details

Part number	CY7C1420KV18, CY7C1418KV18
Manufacturer	Cypress Semiconductor
File Size	777.80 KB
Description	36-Mbit DDR II SRAM Two-Word Burst Architecture
Datasheet	CY7C1418KV18-CypressSemiconductor.pdf
Note	This datasheet PDF includes multiple part numbers: CY7C1420KV18, CY7C1418KV18. Please refer to the document for exact specifications by model.

The CY7C1418KV18, and CY7C1420KV18 are 1.8 V synchronous pipelined SRAM equipped with DDR II architecture.

36-Mbit density (2M × 18, 1M × 36).
333 MHz clock for high bandwidth.
Two-word burst for reducing address bus frequency.
Double data rate (DDR) interfaces (data transferred at 666 MHz) at 333 MHz.
Two input clocks (K and K) for precise DDR timing.
SRAM uses rising edges only.
Two input clocks for output data (C and C) to minimize clock skew and flight time mismatches.
Echo clocks (CQ and CQ) simplify data capture in high speed systems.
Synchronous in.

📁 CY7C1420KV18 Similar Datasheet

CY7C1460SV25 - 36-Mbit (1M x 36/2M x 18) Pipelined SRAM (Cypress)
CY7C1462SV25 - 36-Mbit (1M x 36/2M x 18) Pipelined SRAM (Cypress)
CY7C1006D - 1-Mbit (256K x 4) Static RAM (Cypress)
CY7C1011G - 2-Mbit (128K words x 16 bit) Static RAM (Cypress)
CY7C1041G - 4-Mbit (256K words x 16 bit) Static RAM (Cypress)
CY7C1041GE - 4-Mbit (256K words x 16 bit) Static RAM (Cypress)
CY7C1041GN - 4-Mbit (256K words x 16 bit) Static RAM (Cypress)
CY7C1049GN - 4-Mbit (512K words x 8 bit) Static RAM (Cypress)

Other Datasheets by Cypress Semiconductor

Published: Mar 14, 2017 |