* Low Gate Charge
* Simple Drive Requirement
* Pb-free lead plating and halogen-free package 250V 3.5A 1.0A 780mΩ 735mΩ Equivalent Circuit MTBH0N25J3 Outline TO-252(DPAK) G：Gate D：Drain S：Source G DS Ordering Information Device Package MTBH0N25J3-0-T3-G TO-252 (Pb
MTBH0N25J3 Datasheet (376.19 KB)
MTBH0N25J3
Cystech Electonics
376.19 KB
N-channel enhancement mode power mosfet.
CYStech Electronics Corp. Spec. No. : C895J3 Issued Date : 2015.12.10 Revised Date : Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET MTBH0N25.
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