MTBH0N25L3 N-Channel Enhancement Mode Power MOSFET

Cystech Electonics

Description

CYStech Electronics Corp.Spec.No.: C895L3 Issued Date : 2016.11.26 Revised Date : Page No.: 1/9 N-Channel Enhancement Mode MOSFET MTBH0N25L3 Fea.

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Datasheet Specifications

Part number: MTBH0N25L3
Manufacturer: Cystech Electonics
File Size: 392.82 KB
Datasheet: MTBH0N25L3-CystechElectonics.pdf
Description: N-Channel Enhancement Mode Power MOSFET

Features

* Low Gate Charge
* Simple Drive Requirement
* Pb-free lead plating & Halogen-free package BVDSS ID @ VGS=10V, TA=25°C RDSON@VGS=10V, ID=1A RDSON@VGS=4.5V, ID=1A 250V 1.2A 722mΩ (typ. ) 732mΩ (typ. ) Equivalent Circuit MTBH0N25L3 G：Gate D：Drain S：Source Outline SOT-223 D S

MTBH0N25L3 Distributors

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MTBH0N25L3 N-Channel Enhancement Mode Power MOSFET Cystech Electonics

Cystech Electonics MTBH0N25L3-like datasheet