* Low Gate Charge
* Simple Drive Requirement
* Pb-free lead plating & Halogen-free package BVDSS ID @ VGS=10V, TA=25°C RDSON@VGS=10V, ID=1A RDSON@VGS=4.5V, ID=1A 250V 1.2A 722mΩ (typ.) 732mΩ (typ.) Equivalent Circuit MTBH0N25L3 G：Gate D：Drain S：Source Outline SOT-223 D S
MTBH0N25L3 Datasheet (392.82 KB)
MTBH0N25L3
Cystech Electonics
392.82 KB
N-channel enhancement mode power mosfet.
CYStech Electronics Corp. Spec. No. : C895L3 Issued Date : 2016.11.26 Revised Date : Page No. : 1/9 N-Channel Enhancement Mode MOSFET MTBH0N25L3 Fea.
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