Datasheet4U Logo Datasheet4U.com

MTE011N10RFP - N-Channel Enhancement Mode Power MOSFET

MTE011N10RFP Description

CYStech Electronics Corp.Spec.No.: C169FP Issued Date : 2015.12.01 Revised Date : 2016.04.27 Page No.: 1/ 8 N-Channel Enhancement Mode Power MOS.

MTE011N10RFP Features

* ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C
* Low On Resistance RDS(ON)@VGS=10V, ID=11A
* Simple Drive Requirement
* Low Gate Charge
* Fast Switching Characteristic
* Insulating package, front/back side insulating voltage=2500V(AC)
* RoHS compliant package 100V 34A 9A 11

📥 Download Datasheet

Preview of MTE011N10RFP PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
MTE011N10RFP
Manufacturer
Cystech Electonics
File Size
537.75 KB
Datasheet
MTE011N10RFP-CystechElectonics.pdf
Description
N-Channel Enhancement Mode Power MOSFET

📁 Related Datasheet

  • MTE030N15RH8 - N-Channel Enhancement Mode Power MOSFET (CYStech Electronics)
  • MTE100N10KRH8 - N-Channel Enhancement Mode Power MOSFET (CYStech)
  • MTE1011P - Metal Can Infrarred Emitter (Marktech Corporate)
  • MTE1040 - INFRARED LED (Marktech Corporate)
  • MTE1050A - INFRARED LED (Marktech Corporate)
  • MTE1070A - INFRARED LED (Marktech Corporate)
  • MTE1080 - INFRARED LED (Marktech Corporate)
  • MTE108CL - INFRAED EMITTER (Marktech Corporate)

📌 All Tags

N-Channel Enhancement Mode Power MOSFET Cystech Electonics
Cystech Electonics MTE011N10RFP-like datasheet