DMG8601UFG Datasheet, Mosfet, Diodes

DMG8601UFG Features

• Mosfet
• Low On-Resistance
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• ESD Protected Up To 2KV
• Totally Lead-Fr

PDF File Details

Part number:

DMG8601UFG

Manufacturer:

DIODES ↗

File Size:

142.23kb

Download:

📄 Datasheet

Description:

Dual n-channel mosfet.

DMG8601UFG Application

• Applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on D

TAGS

DMG8601UFG

Diodes

📁 Related Datasheet

DMG8822UTS - Dual N-Channel MOSFET (Diodes)
NEW PRODUCT Features • Low On-Resistance • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Lead Free By Design/RoHS Complia.

DMG8880LK3 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 16.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 30V(Min) ·Static Drain-Source On-Resistance.

DMG8880LK3 - N-Channel MOSFET (Diodes)
DMG8880LK3 N-CHANNEL ENHANCEMENT MODE MOSFET Features • • • • • • • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Lea.

DMG8N65SCT - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 8.0A@ TC=25℃ ·Drain Source Voltage- : VDSS= 650V(Min) ·Static Drain-Source On-Resistance.

DMG8N65SCT - N-CHANNEL MOSFET (Diodes)
DMG8N65SCT N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 650V RDS(ON) 1.3Ω@VGS = 10V Package TO220AB (Type TH) ID TC = +25°C 8A Descri.

DMG - ELECTRIC DOUBLE LAYER CAPACITORS (Rubycon)
DMG SERIES ELECTRIC DOUBLE LAYER CAPACITORS DMG .

DMG1012T - N-Channel MOSFET (Diodes)
Features  Low On-Resistance  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  ESD Protected up.

DMG1012T - N-Channel MOSFET (VBsemi)
DMG1012T DMG1012T N-Channel 20 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) MAX. 0.270 at VGS = 4.5 V 20 0.390 at VGS = 2.5 V ID (A) c 0.8.

DMG1012UW - N-Channel MOSFET (Diodes)
Features • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • ESD Protected Up.

DMG1013T - P-Channel MOSFET (Diodes)
DMG1013T P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS -20V RDS(ON) 700mΩ @ VGS = -4.5V 900mΩ @ VGS = -2.5V 1300mΩ @ VGS = -1.8V ID TA =.