DMG8N65SCT
INCHANGE
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N-channel mosfet. *Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETE
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DMG8N65SCT - N-CHANNEL MOSFET
(Diodes)
DMG8N65SCT
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS 650V
RDS(ON) 1.3Ω@VGS = 10V
Package
TO220AB (Type TH)
ID TC = +25°C
8A
Descri.
DMG8601UFG - Dual N-Channel MOSFET
(Diodes)
NEW PRODUCT
Features
• Low On-Resistance • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • ESD Protected Up To 2KV • Totall.
DMG8822UTS - Dual N-Channel MOSFET
(Diodes)
NEW PRODUCT
Features
• Low On-Resistance • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Lead Free By Design/RoHS Complia.
DMG8880LK3 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
FEATURES ·Drain Current –ID= 16.5A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 30V(Min) ·Static Drain-Source On-Resistance.
DMG8880LK3 - N-Channel MOSFET
(Diodes)
DMG8880LK3
N-CHANNEL ENHANCEMENT MODE MOSFET
Features
• • • • • • • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Lea.
DMG - ELECTRIC DOUBLE LAYER CAPACITORS
(Rubycon)
DMG SERIES
ELECTRIC DOUBLE LAYER CAPACITORS
DMG
.
DMG1012T - N-Channel MOSFET
(Diodes)
Features
Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected up.
DMG1012T - N-Channel MOSFET
(VBsemi)
DMG1012T
DMG1012T N-Channel 20 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω) MAX.
0.270 at VGS = 4.5 V
20 0.390 at VGS = 2.5 V
ID (A) c 0.8.
DMG1012UW - N-Channel MOSFET
(Diodes)
Features
• Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • ESD Protected Up.
DMG1013T - P-Channel MOSFET
(Diodes)
DMG1013T
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS -20V
RDS(ON)
700mΩ @ VGS = -4.5V 900mΩ @ VGS = -2.5V 1300mΩ @ VGS = -1.8V
ID TA =.