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DMG8N65SCT

N-Channel MOSFET

DMG8N65SCT Features

* Drain Current

* ID= 8.0A@ TC=25℃

* Drain Source Voltage- : VDSS= 650V(Min)

* Static Drain-Source On-Resistance : RDS(on) = 1.3Ω(Max)

* 100% avalanche tested

* Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION

* Designed for use

DMG8N65SCT General Description


*Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 650 V ±30 V ID Drain Current-Continuous 8.0 A IDM Drain Current-Single Pluse.

DMG8N65SCT Datasheet (256.44 KB)

Preview of DMG8N65SCT PDF

Datasheet Details

Part number:

DMG8N65SCT

Manufacturer:

INCHANGE

File Size:

256.44 KB

Description:

N-channel mosfet.

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DMG8N65SCT N-Channel MOSFET INCHANGE

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