DMG9N65CTI
389.72kb
N-channel enhancement mode mosfet. This new generation complementary dual MOSFET features low on-resistance and fast switching, making it ideal for high-efficiency powe
TAGS
📁 Related Datasheet
DMG9N65CT - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
FEATURES ·Drain Current –ID= 9A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 650V(Min) ·Static Drain-Source On-Resistance
:.
DMG9N65CT - N-Channel MOSFET
(Diodes)
OBSOLETE – PART DISCONTINUED
PART OBSOLETE - Use DMG7N65SCT
Green
DMG9N65CT
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS 650V
RDS(ON).
DMG9N65CTI - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
FEATURES ·Drain Current –ID= 9A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 650V(Min) ·Static Drain-Source On-Resistance
:.
DMG9926UDM - Dual N-Channel MOSFET
(Diodes)
NEW PRODUCT
Features
• Low Gate Charge • Low RDS(ON):
• 28mΩ @VGS = 4.5V • 32mΩ @VGS = 2.5V • 40mΩ @VGS = 1.8V • Low Input/Output Leakage • Lead Free.
DMG9926USD - Dual N-Channel MOSFET
(Diodes)
NEW PRODUCT
DMG9926USD
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Product Summary
V(BR)DSS 20V
RDS(ON) max
24mΩ @ VGS = 4.5V 29mΩ @ V.
DMG9933USD - Dual P-Channel MOSFET
(Diodes)
DMG9933USD
DUAL P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS -20V
RDS(ON) Max
75mΩ @ VGS = -4.5V 110mΩ @ VGS = -2.5V
ID Max TA = +25°C
.
DMG - ELECTRIC DOUBLE LAYER CAPACITORS
(Rubycon)
DMG SERIES
ELECTRIC DOUBLE LAYER CAPACITORS
DMG
.
DMG1012T - N-Channel MOSFET
(Diodes)
Features
Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected up.
DMG1012T - N-Channel MOSFET
(VBsemi)
DMG1012T
DMG1012T N-Channel 20 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω) MAX.
0.270 at VGS = 4.5 V
20 0.390 at VGS = 2.5 V
ID (A) c 0.8.
DMG1012UW - N-Channel MOSFET
(Diodes)
Features
• Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • ESD Protected Up.