Part number:
DXT751
Manufacturer:
File Size:
120.82 KB
Description:
Pnp surface mount transistor.
* Epitaxial Planar Die Construction
* Complementary NPN Type Available (DXT651)
* Ideally Suited for Automated Assembly Processes
* Ideal for Medium Power Switching or Amplification Applications
* Lead Free By Design/RoHS Compliant (Note 1)
* "Green" D
DXT751
120.82 KB
Pnp surface mount transistor.
📁 Related Datasheet
DXT790AP5 - PNP HIGH GAIN TRANSISTOR
(Diodes)
Features
• BVCEO > -40V • IC = -3A high Continuous Collector Current • ICM = -6A Peak Pulse Current • 43% smaller than SOT223; 60% smaller than TO252 .
DXT13003DG - NPN HIGH VOLTAGE POWER TRANSISTOR
(Diodes)
DXT13003DG
450V NPN HIGH VOLTAGE POWER TRANSISTOR IN SOT223
Features
• BVCEO > 450V • BVCES > 700V • BVEBO > 9V • IC = 1.5A high Continuous Collector.
DXT13003DK - NPN HIGH VOLTAGE POWER TRANSISTOR
(Diodes)
DXT13003DK
450V NPN HIGH VOLTAGE POWER TRANSISTOR IN TO252
Features
• BVCEO > 450V • BVCES > 700V • BVEBO > 9V • IC = 1.5A high Continuous Collector .
DXT13003EK - NPN HIGH VOLTAGE POWER TRANSISTOR
(Diodes)
DXT13003EK
460V NPN HIGH VOLTAGE POWER TRANSISTOR IN TO252
Features
• BVCEO > 460V • BVCES > 700V • BVEBO > 9V • IC = 1.5A high Continuous Collector .
DXT2010P5 - NPN MEDIUM POWER TRANSISTOR
(Diodes)
ADVANCE INFORMATION
Features
• 43% smaller than SOT223; 60% smaller than TO252 • Maximum height just 1.1mm • Rated up to 3.2W • VCEO = 60V • IC = 6A;.
DXT2011P5 - NPN MEDIUM POWER TRANSISTOR
(Diodes)
ADVANCE INFORMATION
A Product Line of Diodes Incorporated
DXT2011P5
100V NPN MEDIUM POWER LOW SATURATION TRANSISTOR POWERDI®5
Features
• BVCEO > 100.
DXT2011P5Q - 100V NPN TRANSISTOR
(DIODES)
DXT2011P5Q
100V NPN MEDIUM POWER LOW SATURATION TRANSISTOR
Description
This bipolar junction transistor (BJT) is designed to meet the stringent requi.
DXT2012P5 - PNP MEDIUM POWER TRANSISTOR
(Diodes)
ADVANCE INFORMATION
Features
• 43% smaller than SOT223; 60% smaller than TO252 • Maximum height just 1.1mm • Rated up to 3.2W • VCEO = 60V • IC = -5..
