Features
* NPN Transistor
* BVCEO > 20V
* IC = 4.5A Continuous Collector Current
* Low Saturation Voltage (150mV max @ 1A)
* RSAT = 47mΩ for a low equivalent On-Resistance
* hFE characterized up to 6A for high current gain hold up
Schottky Diode
* BVR > 40V
Applications
* RθJA efficient, 40% lower than SOT26 6mm2 footprint, 50% smaller than TSOP6 and SOT26 Lead-Free, RoHS Compliant (Note 1) Halogen and Antimony Free. “Green” Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability
A Product Line of Diodes Incorporated
ZXTNS618MC
20V NPN LOW SATURATION TR