BCF30
Diotec Semiconductor
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Surface mount si-epitaxial planartransistors.
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BCF30 - PNP general purpose transistors
(NXP)
DISCRETE SEMICONDUCTORS
..
DATA SHEET
book, halfpage
M3D088
BCF29; BCF30 PNP general purpose transistors
Product specification Supe.
BCF30 - (BCF29 / BCF30) PNP General Purpose Transistors
(Guangdong Kexin)
SMD Type
..
Transistors IC
PNP General Purpose Transistors BCF29,BCF30
SOT-23
+0.1 2.9-0.1 +0.1 0.4-0.1
Unit: mm
+0.1 2.4-0.1
Low.
BCF32 - NPN general purpose transistor
(NXP)
.
BCF32 - Surface mount Si-Epitaxial PlanarTransistors
(Diotec Semiconductor)
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BCF33 - Surface mount Si-Epitaxial PlanarTransistors
(Diotec Semiconductor)
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BCF020T - HIGH EFFICIENCY HETEROJUNCTION POWER FET
(BeRex)
BCF020T
HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 200 µm)
The BeRex BCF020T is a GaAs Power MESFET whose nominal 0.3 micron gate length a.
BCF030T - HIGH EFFICIENCY HETEROJUNCTION POWER FET
(BeRex)
BCF030T
HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 300 µm)
The BeRex BCF030T is a GaAs Power MESFET whose nominal 0.3 micron gate length a.
BCF040T - HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP
(BeRex)
BCF040T
HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 400 µm)
The BeRex BCF040T is a GaAs Power MESFET whose nominal 0.3 micron gate length a.
BCF060T - HIGH EFFICIENCY HETEROJUNCTION POWER FET
(BeRex)
BCF060T
HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 600 µm)
The BeRex BCF060T is a GaAs Power MESFET whose nominal 0.3 micron gate length a.
BCF080T - HIGH EFFICIENCY HETEROJUNCTION POWER FET
(BeRex)
BCF080T
HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 800 µm)
The BeRex BCF080T is a GaAs Power MESFET whose nominal 0.3 micron gate length a.
