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2N5471 Datasheet - ETC

2N5471 P-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS

2NS471 (SILICON) thru 2NS476 P-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS Depletion mode Junction Field-Effect Transistors designed for general-purpose amplifier and switching applications. High Gate Source Breakdown Voltage V(BR)GSS = 40 Vdc (Min) for All Types High DC Input Resistance IGSS = 100 pAdc (Max) @ VGS = 10 Vdc Low Reverse Transfer Capacitance Crss = 1.0pF (Max)@VDs=-15Vdc Tight IDSS Range for Easier Circuit Design Drain and Sourc.

2N5471 Datasheet (253.32 KB)

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Datasheet Details

Part number:

2N5471

Manufacturer:

ETC

File Size:

253.32 KB

Description:

P-channel junction field-effect transistors.

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2N5471 P-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS ETC

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