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2N5471 P-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS

2N5471 Description

2NS471 (SILICON) thru 2NS476 P-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS Depletion mode Junction Field-Effect Transistors designed for general-purpos.

2N5471 Applications

* High Gate
* Source Breakdown Voltage V(BR)GSS = 40 Vdc (Min) for All Types
* High DC Input Resistance IGSS = 100 pAdc (Max) @ VGS = 10 Vdc
* Low Reverse Transfer Capacitance Crss = 1.0pF (Max)@VDs=-15Vdc
* Tight IDSS Range for Easier Circuit Design
* Drai

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Datasheet Details

Part number
2N5471
Manufacturer
ETC
File Size
253.32 KB
Datasheet
2N5471-ETC.pdf
Description
P-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS

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P-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS ETC
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