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2N5474, 2N5471 Datasheet - ETC

2N5474 P-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS

2NS471 (SILICON) thru 2NS476 P-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS Depletion mode Junction Field-Effect Transistors designed for general-purpose amplifier and switching applications. High Gate Source Breakdown Voltage V(BR)GSS = 40 Vdc (Min) for All Types High DC Input Resistance IGSS = 100 pAdc (Max) @ VGS = 10 Vdc Low Reverse Transfer Capacitance Crss = 1.0pF (Max)@VDs=-15Vdc Tight IDSS Range for Easier Circuit Design Drain and Sourc.

2N5471-ETC.pdf

This datasheet PDF includes multiple part numbers: 2N5474, 2N5471. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

2N5474, 2N5471

Manufacturer:

ETC

File Size:

253.32 KB

Description:

P-channel junction field-effect transistors.

Note:

This datasheet PDF includes multiple part numbers: 2N5474, 2N5471.
Please refer to the document for exact specifications by model.

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TAGS

2N5474 2N5471 P-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS ETC

2N5474 Distributor