MSP-600
ETC
212.23kb
Digitally compensated emi/rfi protected stainless steel isolated pressure transducer.
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📁 Related Datasheet
MSP0203 - P-Channel Enhancement Mode Power MOSFET
(MORESEMI)
MSP0203
-20V(D-S) P-Channel Enhancement Mode Power MOS FET
GENERAL FEATURES
● VDS = -20V,ID = -3A RDS(ON) < 140mΩ @ VGS=-2.5V RDS(ON) < 110mΩ @ VGS=-.
MSP0204 - P-Channel Enhancement Mode Power MOSFET
(MORESEMI)
MSP0204
-20V(D-S) P-Channel Enhancement Mode Power MOS FET
General Features
● VDS = -20V,ID = -3.9A RDS(ON) <70mΩ @ VGS=-2.5V RDS(ON) < 50mΩ @ VGS=-.
MSP0204E - P-Channel Enhancement Mode Power MOSFET
(MORESEMI)
MSP0204E
-20V(D-S) P-Channel Enhancement Mode Power MOS FET
General Features
● VDS = -20V,ID =-4A RDS(ON) < 60mΩ @ VGS=-2.5V RDS(ON) < 45mΩ @ VGS=-4.
MSP0205 - P-Channel Enhancement Mode Power MOSFET
(MORESEMI)
MSP0205
-20V(D-S) P-Channel Enhancement Mode Power MOS FET
General Features
● VDS = -20V,ID = -4.1A RDS(ON) <75mΩ @ VGS=-2.5V RDS(ON) < 52mΩ @ VGS=-4.
MSP0205A - P-Channel Enhancement Mode Power MOSFET
(MORESEMI)
MSP0205A
-12V(D-S) P-Channel Enhancement Mode Power MOS FET
General Features
● VDS = -12V,ID = -4.1A RDS(ON) < 60mΩ @ VGS=-2.5V RDS(ON) < 45mΩ @ VGS=.
MSP02120V1 - Silicon Carbide Diode
(Maple Semiconductor)
MSP02120V1
MSP02120V1 1200V Silicon Carbide Diode
Features
-1200-Volt Schottky Rectifier -Shorter recovery time -High-speed switching possible -High.
MSP0304 - P-Channel Enhancement Mode Power MOSFET
(MORESEMI)
MSP0304
-30V(D-S) P-Channel Enhancement Mode Power MOS FET
General Features
● VDS = -30V,ID = -4.2A RDS(ON) < 130mΩ @ VGS=-2.5V RDS(ON) < 75mΩ @ VGS.
MSP0305W - P-Channel Enhancement Mode Power MOSFET
(MORESEMI)
MSP0305W
-30V(D-S) P-Channel Enhancement Mode Power MOS FET
General Features
● VDS = -30V,ID = -5.1A RDS(ON) < 105mΩ @ VGS=-4.5V RDS(ON) < 55mΩ @ VG.
MSP0307W - P-Channel Enhancement Mode Power MOSFET
(MORESEMI)
MSP0307W
-30V(D-S) P-Channel Enhancement Mode Power MOS FET
General Features
● VDS =-30V,ID =-6.5A RDS(ON) < 42mΩ @ VGS=-10V RDS(ON) < 72mΩ @ VGS=-4..
MSP0309W - P-Channel Enhancement Mode Power MOSFET
(MORESEMI)
MSP0309W
-30V(D-S) P-Channel Enhancement Mode Power MOS FET
GENERAL FEATURES
● VDS = -30V,ID = -9.1A RDS(ON) < 35mΩ @ VGS=-4.5V RDS(ON) < 20mΩ @ VGS.