PTB20079 10 Watts/ 1.6-1.7 GHz INMARSAT RF Power Transistor

Ericsson

Description

e PTB 20079 10 Watts, 1.6 *1.7 GHz INMARSAT RF Power Transistor .
The 20079 is a class A/AB, NPN, silicon bipolar junction, internallymatched, common emitter RF Power transistor intended for 26 Vdc operation across 1.

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Datasheet Specifications

Part number: PTB20079
Manufacturer: Ericsson
File Size: 184.58 KB
Datasheet: PTB20079_Ericsson.pdf
Description: 10 Watts/ 1.6-1.7 GHz INMARSAT RF Power Transistor

Applications

* Ion implantation, nitride surface passivation and gold metallization ensure excellent device reliability. 100% lot traceability is standard. 10 Watts, 1.6
* 1.7 GHz Class A/AB Characteristics 38% Collector Efficiency at 10 Watts Gold Metallization Silicon Nitride Passivated Typic

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PTB20079 Watts 1.6-1.7 GHz INMARSAT Power Transistor Ericsson

Ericsson PTB20079-like datasheet