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EMA06N03AN Datasheet - Excelliance MOS

EMA06N03AN N-Channel Logic Level Enhancement Mode Field Effect Transistor

  N‐Channel Logic Level Enhancement Mode Field Effect Transistor  Product Summary:  BVDSS  25V  D RDSON (MAX.)  6mΩ  ID  80A  G   UIS, Rg 100% Tested  S Pb‐Free Lead Plating & Halogen Free    ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)  PARAMETERS/TEST CONDITIONS  SYMBOL  EMA06N03AN LIMITS  UNIT  Gate‐Source Voltage  Continuous Drain Current  Pulsed Drain Current1  TC = 25 °C  TC = 100 °C  Avalanche Current  Avalanche Energy  L = 0.1mH, ID=53A, RG=25Ω Rep.

EMA06N03AN-ExcellianceMOS.pdf

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Datasheet Details

Part number:

EMA06N03AN

Manufacturer:

Excelliance MOS

File Size:

227.87 KB

Description:

N-channel logic level enhancement mode field effect transistor.

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EMA06N03AN EMA06N03AN N-Channel Logic Level Enhancement Mode Field Effect Transistor Excelliance MOS

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