EMA09N03AN Datasheet - Excelliance MOS

EMA09N03AN - N-Channel MOSFET

N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 25V D RDSON (MAX.) 9mΩ ID 50A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL EMA09N03AN LIMITS UNIT Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C Avalanche Current Avalanche Energy L = 0.1mH, ID=37.5A, RG=25Ω R.

EMA09N03AN-ExcellianceMOS.pdf

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Datasheet Details

Part number:

EMA09N03AN

Manufacturer:

Excelliance MOS

File Size:

229.39 KB

Description:

N-channel mosfet.

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EMA09N03AN N-Channel MOSFET Excelliance MOS