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EMA09N03AN Datasheet - Excelliance MOS

EMA09N03AN N-Channel MOSFET

  N‐Channel Logic Level Enhancement Mode Field Effect Transistor  Product Summary:  BVDSS  25V  D RDSON (MAX.)  9mΩ  ID  50A  G   UIS, Rg 100% Tested  S Pb‐Free Lead Plating & Halogen Free    ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)  PARAMETERS/TEST CONDITIONS  SYMBOL  EMA09N03AN LIMITS  UNIT  Gate‐Source Voltage  Continuous Drain Current  Pulsed Drain Current1  TC = 25 °C  TC = 100 °C  Avalanche Current  Avalanche Energy  L = 0.1mH, ID=37.5A, RG=25Ω R.

EMA09N03AN-ExcellianceMOS.pdf

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Datasheet Details

Part number:

EMA09N03AN

Manufacturer:

Excelliance MOS

File Size:

229.39 KB

Description:

N-channel mosfet.

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