EMA04N03A Datasheet - Excelliance MOS

EMA04N03A - MOSFET

EMA04N03A N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 25V D RDSON (MAX.) 4mΩ ID 80A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate‐Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C 80 ID TC = 100 °C 50 IDM 170 Avalanche Current IAS 53 Avalanche Energy L = 0.1mH, ID=53A, RG=2.

EMA04N03A-ExcellianceMOS.pdf

EMA04N03A Datasheet Preview — Preview of EMA04N03A PDF

Datasheet Details

Part number:

EMA04N03A

Manufacturer:

Excelliance MOS

File Size:

232.58 KB

Description:

Mosfet.

EMA04N03A Distributor

📁 Related Datasheet

EMA06N03AN EMA06N03CS EMA09N03AN EMA09N03CS EMA1001 EMA1001-50MA08GRR

📌 All Tags

EMA04N03A MOSFET Excelliance MOS