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EMA04N03A Datasheet - Excelliance MOS

EMA04N03A MOSFET

EMA04N03A N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 25V D RDSON (MAX.) 4mΩ ID 80A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate‐Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C 80 ID TC = 100 °C 50 IDM 170 Avalanche Current IAS 53 Avalanche Energy L = 0.1mH, ID=53A, RG=2.

EMA04N03A-ExcellianceMOS.pdf

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Datasheet Details

Part number:

EMA04N03A

Manufacturer:

Excelliance MOS

File Size:

232.58 KB

Description:

Mosfet.

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