EMB06N03A Datasheet - Excelliance MOS

EMB06N03A N-Channel Logic Level Enhancement Mode Field Effect Transistor

N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V RDSON (MAX.) 6mΩ ID 70A N Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 TC = 25 °C 70 Continuous Drain Current ID TC = 100 °C 45 Pulsed Drain Current1 IDM 280 Avalanche Current IAS 40 Avalanche Energy L = 0.1mH EAS 80 Rep.

EMB06N03A Datasheet (918.77 KB)

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Datasheet Details

Part number:

EMB06N03A

Manufacturer:

Excelliance MOS

File Size:

918.77 KB

Description:

N-channel logic level enhancement mode field effect transistor.

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EMB06N03A N-Channel Logic Level Enhancement Mode Field Effect Transistor Excelliance MOS

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