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EMB06N03V Datasheet - Excelliance MOS

EMB06N03V N-Channel Logic Level Enhancement Mode Field Effect Transistor

    N‐Channel Logic Level Enhancement Mode Field Effect Transistor  Product Summary:  BVDSS  30V  D RDSON (MAX.)  6mΩ  ID  26A  G   UIS, Rg 100% Tested  S Pb‐Free Lead Plating & Halogen Free    ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)  PARAMETERS/TEST CONDITIONS  SYMBOL  Gate‐Source Voltage  Continuous Drain Current  Pulsed Drain Current1  TC = 25 °C  TC = 100 °C  Avalanche Current  Avalanche Energy  Repetitive Avalanche Energy2  L = 0.1mH, ID=14A, RG=25Ω .

EMB06N03V Datasheet (207.19 KB)

Preview of EMB06N03V PDF

Datasheet Details

Part number:

EMB06N03V

Manufacturer:

Excelliance MOS

File Size:

207.19 KB

Description:

N-channel logic level enhancement mode field effect transistor.

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EMB06N03V N-Channel Logic Level Enhancement Mode Field Effect Transistor Excelliance MOS

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