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EMB06N03V N-Channel Logic Level Enhancement Mode Field Effect Transistor

EMB06N03V Description

    N‐Channel Logic Level Enhancement Mode Field Effect Transistor  Product Summary:  BVDSS  30V  D RDSON (MAX.)  6mΩ  ID  26A  G   UIS, Rg 10.

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Datasheet Details

Part number
EMB06N03V
Manufacturer
Excelliance MOS
File Size
207.19 KB
Datasheet
EMB06N03V-ExcellianceMOS.pdf
Description
N-Channel Logic Level Enhancement Mode Field Effect Transistor

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N-Channel Logic Level Enhancement Mode Field Effect Transistor Excelliance MOS
Excelliance MOS EMB06N03V-like datasheet