EMB06N03E Datasheet - Excelliance MOS

EMB06N03E N-Channel Logic Level Enhancement Mode Field Effect Transistor

EMB06N03E N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 6mΩ ID 80A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C Avalanche Current Avalanche Energy Repetitive Avalanche Energy2 L = 0.1mH, IAS=53A, RG=25Ω L = 0.05m.

EMB06N03E Datasheet (250.90 KB)

EMB06N03E Datasheet Preview — Preview of EMB06N03E PDF

Datasheet Details

Part number:

EMB06N03E

Manufacturer:

Excelliance MOS

File Size:

250.90 KB

Description:

N-channel logic level enhancement mode field effect transistor.

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EMB06N03E N-Channel Logic Level Enhancement Mode Field Effect Transistor Excelliance MOS

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