EMB06N03E Datasheet, Transistor, Excelliance MOS

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Part number:

EMB06N03E

Manufacturer:

Excelliance MOS

File Size:

250.90kb

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📄 Datasheet

Description:

N-channel logic level enhancement mode field effect transistor.

TAGS

EMB06N03E

Excelliance MOS

📁 Related Datasheet

EMB06N03A - N-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)
N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V RDSON (MAX.) 6mΩ ID 70A N Channel MOSFET UIS, Rg 10.

EMB06N03G - N-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 6mΩ ID 18A G UIS, Rg 100% Tested S.

EMB06N03GH - MOSFET (Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 6mΩ ID 18A G UIS, Rg 100% Tested S.

EMB06N03H - N-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 6mΩ ID 75A G UIS, Rg 100% Tested S.

EMB06N03HR - N-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 6mΩ ID 75A G UIS, Rg 100% Tested S.

EMB06N03V - N-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)
    N‐Channel Logic Level Enhancement Mode Field Effect Transistor  Product Summary:  BVDSS  30V  D RDSON (MAX.)  6mΩ  ID  26A  G   UIS, Rg 10.

EMB06N06A - N-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)
EMB06N06A N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 60V D RDSON (MAX.) 5.2mΩ ID 80A G UIS, Rg 1.

EMB06N06CS - N-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)
EMB06N06CS N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 60V D RDSON (MAX.) 5.7mΩ ID 70A G UIS, Rg .

EMB06N06H - N-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)
EMB06N06H N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 60V D RDSON (MAX.) 5.2mΩ ID 80A G UIS, Rg 1.

EMB06N06HS - N-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)
N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 60V RDSON (MAX.) @VGS=10V RDSON (MAX.) @VGS=4.5V 5.2mΩ 7.5m.