EMB06N03GH Datasheet - Excelliance MOS

EMB06N03GH MOSFET

N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 6mΩ ID 18A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 100 °C Avalanche Current Avalanche Energy Repetitive Avalanche Energy2 L = 0.1mH, ID=20A, RG=25Ω L = 0.05mH Power Dissipation.

EMB06N03GH Datasheet (187.92 KB)

EMB06N03GH Datasheet Preview — Preview of EMB06N03GH PDF

Datasheet Details

Part number:

EMB06N03GH

Manufacturer:

Excelliance MOS

File Size:

187.92 KB

Description:

Mosfet.

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EMB06N03GH MOSFET Excelliance MOS

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