EMB06N03H Datasheet (Excelliance MOS) - N-Channel Logic Level Enhancement Mode Field Effect Transistor

EMB06N03H, N-Channel Logic Level Enhancement Mode Field Effect Transistor

N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 6mΩ ID 75A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Free EMB06N03H ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C Avalanche Current Avalanche Energy L = 0.1mH, ID=53A, RG=25Ω Repetitive Avalanche Energy2 L = 0.05