EMB06N03H Datasheet - Excelliance MOS

EMB06N03H N-Channel Logic Level Enhancement Mode Field Effect Transistor

N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 6mΩ ID 75A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Free EMB06N03H ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C Avalanche Current Avalanche Energy L = 0.1mH, ID=53A, RG=25Ω Repetitive Avalanche Energy2 L = 0.05.

EMB06N03H Datasheet (220.67 KB)

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Datasheet Details

Part number:

EMB06N03H

Manufacturer:

Excelliance MOS

File Size:

220.67 KB

Description:

N-channel logic level enhancement mode field effect transistor.

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EMB06N03H N-Channel Logic Level Enhancement Mode Field Effect Transistor Excelliance MOS

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