EMB08K04G Datasheet - Excelliance MOS

EMB08K04G N-Channel Logic Level Enhancement Mode Field Effect Transistor

N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: N‐CH‐Q1 N‐CH‐Q2 BVDSS 40V 40V RDSON (MAX.) 17.5mΩ 8.8mΩ ID 7.4A 10.5A UIS, Rg 100% Tested Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C Avalanche Current Avalanche Energy Repetitive Avalanche Energy2 L = 0.1mH, RG=25Ω L = 0.05m.

EMB08K04G Datasheet (220.51 KB)

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Datasheet Details

Part number:

EMB08K04G

Manufacturer:

Excelliance MOS

File Size:

220.51 KB

Description:

N-channel logic level enhancement mode field effect transistor.

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EMB08K04G N-Channel Logic Level Enhancement Mode Field Effect Transistor Excelliance MOS

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